| Manufacturing Technology: | Optoelectronic Semiconductor |
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| Material: | Element Semiconductor |
| Type: | N-type Semiconductor |
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| Currency: | US$ |
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| Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Audited Supplier | MODEL: | 1ED020I12-F2 | 2ED020I12-F2 |
1200 V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
EiceDRIVER™ 1200 V high-side gate driver with typical 2 A source and 2 A sink currents in DSO-16 wide body package for IGBTs. All logic pins are 5 V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology.
Summary of Features
Benefits
| Parametrics | 1ED020I12-F2 |
|---|---|
| Channels | 1 |
| Configuration | High-side |
| Input Vcc min max | 4.5 V 5.5 V |
| Isolation Type | Galvanic isolation - Functional |
| Output Current (Source) | 2 A |
| Output Current (Sink) | 2 A |
| Turn Off Propagation Delay | 165 ns |
| Turn On Propagation Delay | 170 ns |
| VBS UVLO (Off) | 11 V |
| VBS UVLO (On) | 12 V |
| VCC UVLO (Off) | 3.8 V |
| VCC UVLO (On) | 4.1 V |
| Voltage Class | 1200 V |
Our IGBT product selection provides a broad variety of different devices. These products address a wide range of applications in the field of automotive, traction, energy transmission, industrial and consumer systems. Our solutions offer very low power losses in the forward and blocking state, require only low drive power and have a high efficiency. The IGBTs can withstand voltages up to 6.5 kV and operate at a switching frequency from 2 kHz to 50 kHz.
We offer a broad portfolio of IGBT chips assembled in discrete plastic packages, so called Discretes IGBTs, which are available as Single IGBTs and co-packed with freewheeling Diode. This devices are suitable for applications such as General Purpose Inverters, Solar Inverters, UPS, Induction Heating, Major Home Appliances, Welding and SMPS. Benefits of Discretes IGBT are high current density and low power dissipation resulting in higher efficiency and smaller heat sink to allow lower overall system cost.
Larger arrangements that form basic building blocks of power electronic equipment are considered Power Modules usually combining IGBT and diode dies in various topologies. With the help of high performance components, these power modules can cope with the needs of highest power applications. From all-in-one power integrated modules with rectifier, brake chopper and to inverter part, Infineon products cover a range from only hundreds of watts to several megawatts. General purpose drives, servo-units and renewable energy applications like solar inverters or wind applications benefit from the outstanding performance, efficiency and longevity of these highly reliable products.
The HybridPACK™ family as a special product series with automotive qualification is available to support the designer's efforts in electric mobility. Infineon further supports the automotive industry, providing a variety of discrete IGBT power semiconductors qualified according to AECQ101.
To ease setting up a laboratory experiment or a first prototype, Infineon helps by providing evaluation boards for most of the products to accelerate development cycles. Thus, conclusive results can be generated within the shortest possible time.
Suppliers with verified business licenses
Audited Supplier 
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