• FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
  • FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
  • FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
  • FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
  • FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
  • FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT

FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT

Manufacturing Technology: Optoelectronic Semiconductor
Material: Element Semiconductor
Type: N-type Semiconductor
Samples:
US$ 670/Piece 1 Piece(Min.Order)
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Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
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FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT pictures & photos
FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
US $640-660 / Piece
Min. Order: 2 Pieces
Gold Member Since 2023

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Basic Info.

Model NO.
FF2MR12KM1
Package
PGA(Pin Grid Array Package)
Signal Processing
Analog Digital Composite and Function
Application
Photovoltaic,UPS
Model
FF2mr12km1
Batch Number
2022+
Brand
Infineon
Configuration
Half-Bridge
RDS (on) (@ Tj = 25°c)
2 MΩ
Housing
62mm
Qualification
Industrial
Transport Package
Carton
Trademark
Infineon
Origin
Germany
Production Capacity
50000 PC/ Year

Packaging & Delivery

Package Size
36.00cm * 25.00cm * 5.00cm
Package Gross Weight
4.000kg

Product Description

MODEL:  FF2MR12KM1 FF6MR12KM1

Infineon 

62 mm 1200 V, 2 mΩ half-bridge module with CoolSiC™ MOSFET.

New generation of M1H product FF1MR12KM1H coming soon.

Summary of Features

  • High current density
  • Low switching losses
  • Superior gate oxide reliability
  • Highest robustness against humidity
  • Robust integrated body diode, and thus optimal thermal conditions
  • High cosmic ray robustness
  • High speed switching module with very low losses
  • Symmetrical module design and switching behavior of upper and lower switch
  • Standard construction technique of the module and therefore known reliable. Production in the 62mm high volume production line

Benefits

  • Minimizes cooling efforts due to very low switching losses
  • High switching frequency allows using less magnetic components. Therefore reduction in volume and size/dimension
  • Reduction of system costs, due to module benefits

Applications

  • Photovoltaic
  • Uninterruptible Power Supplies (UPS)
Parametrics FF2MR12KM1
Applications ESS ; EV Charger ; Solar ; UPS
Configuration Half-bridge
Housing 62 mm
Qualification Industrial
RDS (on) (@ Tj = 25°C) 2 mΩ

 

FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT


IGBT Discretes, Press Pack,
power modules and even stack solutions in different voltage- and current classes.


Our IGBT product selection provides a broad variety of different devices. These products address a wide range of applications in the field of automotive, traction, energy transmission, industrial and consumer systems. Our solutions offer very low power losses in the forward and blocking state, require only low drive power and have a high efficiency. The IGBTs can withstand voltages up to 6.5 kV and operate at a switching frequency from 2 kHz to 50 kHz.

FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT

General description of our IGBT portfolio

We offer a broad portfolio of IGBT chips assembled in discrete plastic packages, so called Discretes IGBTs, which are available as Single IGBTs and co-packed with freewheeling Diode. This devices are suitable for applications such as General Purpose Inverters, Solar Inverters, UPS, Induction Heating, Major Home Appliances, Welding and SMPS. Benefits of Discretes IGBT are high current density and low power dissipation resulting in higher efficiency and smaller heat sink to allow lower overall system cost.
Larger arrangements that form basic building blocks of power electronic equipment are considered Power Modules usually combining IGBT and diode dies in various topologies. With the help of high performance components, these power modules can cope with the needs of highest power applications. From all-in-one power integrated modules with rectifier, brake chopper and to inverter part, Infineon products cover a range from only hundreds of watts to several megawatts. General purpose drives, servo-units and renewable energy applications like solar inverters or wind applications benefit from the outstanding performance, efficiency and longevity of these highly reliable products.
The HybridPACK™ family as a special product series with automotive qualification is available to support the designer's efforts in electric mobility. Infineon further supports the automotive industry, providing a variety of discrete IGBT power semiconductors qualified according to AECQ101.
To ease setting up a laboratory experiment or a first prototype, Infineon helps by providing evaluation boards for most of the products to accelerate development cycles. Thus, conclusive results can be generated within the shortest possible time.

FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBTFF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
COMPANY PROFILE
 
Shenzhen Botong Electric Co., Ltd. is a professional distributor of imported branded products, located at 7S Yindu, Building 100, No. 4 Zhonghang Road, Huahang Community, Huaqiang North Street, Futian District, Shenzhen. Headquartered in Beijing (established in 2006), with offices in Shandong and Hebei. Its business involves power electronic components and supporting PI drive boards, LEM sensors, fans, and capacitors. Our company acts as an agent for the distribution of IGBT, IPM, PIM, rectifier bridge, thyristor, diode, etc. in Infineon, Semi kron, HITACHI, Fuji, Mitsubishi, SanRex, IXYS, etc; Ximenkang, PI driver board; Liteon optocoupler; Japan Jianzao IDC driver module; Electrolytic capacitor; Electronic components such as absorption capacitors (CAPSIT). Mainly used in: industrial automation, high-voltage inverter, UPS, inverter welding machine, inverter, high-frequency induction heating, commercial induction cooker, inverter power supply, wind and solar power generation, electric locomotive, electroplating power supply, soft start and other fields. We meet customer needs with excellent product performance, high reliable quality, superior service, the most favorable price and delivery time.
Storage & Delivery
 
FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
SHIPPING

1.FEDEX/DHL/UPS for samples.
2.By Sea for batch goods.
3.Customers specifying freight forwarders or negotiable shipping methods.


FAQ

  1.Q :What's the MOQ. Can I get a sample of free?
      A : MOQ, according to the actual situation.
      We can offer a sample of free. Please, friendly bear the shipping cost.
   2.Q : When can i get the quotation?
      A : We usually quote within 24 hours after getting your detailed requirements, like size, quantity, etc.
   3.Q : What is your payments terms?
      A : We can accept 30% deposit, 70% balance to be against the BL copy or by LC, or other payment terms.
   4.Q : What is your terms of delivery?
      A : We accept FOB, CFR, CIF, EXW, etc. You can choose the most convenient way for 
      you. Besides that, we can also shipping by Air and Express. 

 

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From payment to delivery, we protect your trading.
FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT pictures & photos
FF2mr12km1 High Cosmic Ray Robustness 2 MΩ Half-Bridge Module with Coolsic™ Mosfet IGBT
US $640-660 / Piece
Min. Order: 2 Pieces
Gold Member Since 2023

Suppliers with verified business licenses

Secured Trading Service
Trading Company
Management System Certification
ISO 9001, ISO 14001